Fabrication of in-situ Ti-doped CuGaS2 thin films for intermediate band solar cell applications by sputtering with CuGaS2:Ti targets-Reference-Cited by-同舟云学术

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Fabrication of in-situ Ti-doped CuGaS2 thin films for intermediate band solar cell applications by sputtering with CuGaS2:Ti targets

Published:2019-11 Issue: Volume:169 Page:108921
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Wei Yaowei,Zhuang Daming,Zhao Ming,Zhang Ning,Yu Xinping,Li Xinchen,Lyu Xunyan,Wang Chen,Hu Lan

Funder

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

State Key Laboratory of New Ceramics and Fine Processing

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference21 articles.

1. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels;Luque;Phys. Rev. Lett.,1997

2. The intermediate band solar cell: progress toward the realization of an attractive concept;Luque;Adv. Mater.,2010

3. Effect of capping procedure on quantum dot morphology: implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells;Weiner;Sol. Energy Mater. Sol. Cells,2018

4. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells;Tanaka;J. Cryst. Growth,2013

5. Preparation and characterization of the Si:Co layer for intermediate band solar cell applications;Yuan;Opt. Mater.,2018

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1. Thermal properties of In2O3 and α-Ga2S3 compounds;Solid State Communications;2024-11

2. Elucidating the effects of Cr–S variations in Cr-doped CZTS for intermediate band solar cell applications;Optical Materials;2024-08

3. CsxWO3 films with excellent infrared shielding ability and high visible light transmittance prepared via magnetron sputtering;Ceramics International;2024-08

4. Band structure, photoelectric properties, and electronic transition mechanism of CuGa1-xTixS2 compound synthesized by solid-state reaction sintering method;Advanced Composites and Hybrid Materials;2021-08-06

5. Rapid fabrication and characterization of CuGaS2:Ti intermediate-band material by the solvothermal method;Applied Physics A;2021-07-16

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