Preparation and electrical characteristics of Li–N co-doped InZnAlO thin film transistors by radio frequency magnetron sputtering
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference42 articles.
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3. Effect of in addition and annealing temperature on the device performance of solution-processed In–Zn–Sn–O thin film transistors;Kim;Solid State Electron.,2014
4. Fabrication and electrical characterization of Li–N dual doped ZnO thin film transistor;Zhou;Appl. Surf. Sci.,2014
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