Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs-Reference-Cited by-同舟云学术

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Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Published:1999-05 Issue:1-3 Volume:59 Page:390-394
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schlotter P,Baur J,Hielscher Ch,Kunzer M,Obloh H,Schmidt R,Schneider J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

3. Luminescence conversion of blue light emitting diodes

4. Festkörperprobleme;Baur;Adv. Solid State Phys.,1998

5. The Blue Laser Diode, GaN Based Light Emitters and Lasers;Nakamura,1997

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