GaN-based optoelectronics on silicon substrates
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Publisher
Elsevier BV
Reference55 articles.
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4. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
5. High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
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