Distribution of below-gap states in undoped GaAs/AlGaAs quantum wells revealed by two-wavelength excited photoluminescence-Reference-Cited by-同舟云学术

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Distribution of below-gap states in undoped GaAs/AlGaAs quantum wells revealed by two-wavelength excited photoluminescence

Published:1998-07 Issue:1 Volume:79 Page:39-46
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Hoshino K,Kimura H,Uchida T,Kamata N,Yamada K,Nishioka M,Arakawa Y

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference13 articles.

1. Some optical properties of Cu in GaP

2. Optical transitions via the deep O donor in GaP. I. Phonon interaction in low-temperature spectra

3. Optical characterization of deep energy levels in semiconductors

4. Fatigue and Recovery Effects of the 0.65-eV Emission Band in GaAs

5. Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure;Optical Materials;2019-03

2. Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence;Journal of Applied Physics;2018-04-28

3. Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation;physica status solidi (b);2016-11-15

4. Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence;Optical Materials;2016-10

5. Nonradiative centers in Ba3Si6O12N2:Eu2+ phosphors observed by the below-gap excitation method;Materials Letters;2015-04

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