Effect of thermal annealing on the microstructural and electrical properties of Al-doped ZnO thin films grown on n-Si (100) substrates-Reference-Cited by-同舟云学术

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Effect of thermal annealing on the microstructural and electrical properties of Al-doped ZnO thin films grown on n-Si (100) substrates

Published:2010-11 Issue:1 Volume:43 Page:256-260
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Han J.H.,No Y.S.,Lee J.Y.,Kim T.W.,Kim J.Y.,Choi W.K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition

2. A Light-Emitting Field-Effect Transistor

3. ZnO diode fabricated by excimer-laser doping

4. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

5. Dye sensitised zinc oxide: aqueous electrolyte: platinum photocell

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on p-Si (100) substrates;Applied Surface Science;2011-06

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