Hydrostatic pressure and electric-field effects on the electronic and optical properties of InAs spherical layer quantum dot
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends
2. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
3. Temperature and pressure dependences of the dielectric constants of semiconductors
4. Exciton mixing in quantum wells
5. Effect of the Gamma -X crossover on the binding energies of confined donors in single GaAs/AlxGa1-xAs quantum-well microstructures
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Combined effects of thermodynamic factors and external fields for nonlinear optical processes of deformed Mathieu quantum dot containing central impurity;Physics Letters A;2023-09
2. Application of molecular simulation in tertiary oil recovery: A systematic review;Journal of Petroleum Science and Engineering;2022-05
3. Scattering by interface roughness of InAs/GaAs quantum well under some external influences;Physica E: Low-dimensional Systems and Nanostructures;2019-04
4. Analyzing the correction factor relevant to Kerr nonlinearity in impurity doped quantum dots for a passage from non-absorbing to absorbing media: Role of noise;Journal of Physics and Chemistry of Solids;2018-10
5. Modulating electro-absorption coefficient of impurity doped quantum dots driven by noise;Photonics and Nanostructures - Fundamentals and Applications;2018-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3