Electric field induced enhancement of multisubband electron mobility in strained GaAs/InGaAs coupled quantum well structures
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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1. Asymmetric Doping‐Dependent Electron Transport Mobility in InxGa1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure;physica status solidi (b);2024-07-28
2. Improvement of electron mobility mediated by interface roughness scattering in pseudomorphic GaAs/In0.15Ga0.85As asymmetric double quantum well structure;Materials Today: Proceedings;2023-06
3. Transport and quantum lifetimes of electrons in modulation doped Al0.3Ga0.7As/In0.15Ga0.85As double quantum well structure;Physics Letters A;2023-06
4. Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure;Physica Scripta;2023-05-11
5. Improvement of Electron Transport in Pseudomorphic In0.52Al0.48As/InyGa1-y As Double Quantum Well Structure;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
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