Heavy ion induced single event effects in semiconductor device-Reference-Cited by-同舟云学术

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Heavy ion induced single event effects in semiconductor device

Published:1998-02 Issue:1-4 Volume:135 Page:239-243
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liu Jie,Ma Feng,Hou Mingdong,Sun Youmei,Quan Jinming,Zhou Yanpin,Zhong Yujin,Fan Jinde,Chen Zhaoyun,Feng Fuyin

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Satellite Anomalies from Galactic Cosmic Rays

2. Rate prediction for single event effects-a critique

3. Heavy Ion Induced Upsets in Semiconductor Devices

4. Observations of single-event upsets in non-hardened high-density SRAMs in Sun-synchronous orbit

5. The SEU Risk Assessment of Z80A, 8086 and 80C86 Microprocessors Intended for Use in a Low Altitude Polar Orbit

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers;Journal of Alloys and Compounds;2024-05

2. The effects of Total Ionizing Dose irradiation on supercapacitors deployed in nuclear decommissioning environments;Journal of Power Sources;2020-12

3. A single-ion monitor based on coincident measurement of secondary electrons for single event effect research;Review of Scientific Instruments;2020-04-01

4. Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip;IEEE Transactions on Nuclear Science;2018-01

5. Materials research with swift heavy ions at the IMP accelerators;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04

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