The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals-Reference-Cited by-同舟云学术

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The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals

Published:1996 Issue: Volume: Page:209-212
ISSN:
Container-title:C,H,N and O in Si and Characterization and Simulation of Materials and Processes
language:
Short-container-title:

Author:

Wolf E.,Schröder W.,Riemann H.,Lux B.

Publisher

Elsevier

Reference5 articles.

1. The formation of swirl defects in silicon by agglomeration of self-interstitials

2. The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensation

3. The nature and formation mechanism of anomalous defects in dislocation free FZ-silicon crystals caused by hydrogen doping

4. Nitrogen doping during growth of dislocation-free FZ silicon crystals

5. K.E. Breuer, Thesis, University of München, 1981.

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