Te doping with dimethylditelluride during organometallic vapor phase epitaxy of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Te doping of vapor phase epitaxial GaAs
2. Te doping of GaAs and AlxGa1−xAs using diethyltellurium in low pressure OMVPE
3. Zinc and tellurium doping in GaAs and AlxGa1−xAs grown by MOCVD
4. Te doping of GaAs using diethyl‐tellurium
5. Photoluminescence Study of Heavily Te-doped GaAs Grown by Liquid-Phase Epitaxy
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2. Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs;Journal of Crystal Growth;2013-11
3. Te doping of GaAs using metalorganic vapor phase epitaxy: Volatile versus nonvolatile behavior;Journal of Applied Physics;2008-12
4. Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy;Journal of Crystal Growth;2004-09
5. Point defects and diffusion in thin films of GaAs;Materials Science and Engineering: R: Reports;1997-10
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