Author:
Hirata Hiroshi,Hoshikawa Keigo,Inoue Naohisa
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Elimination of Random Compositional Inhomogeneities in Czochralski Grown Silicon
2. Czochralski-type crystal growth in transverse magnetic fields
3. Proc. 20th Semiconductor Technical School in Japan;Hoshi,1982
4. H. Hirata and K. Hoshikawa, Japanese Patent, Open No. 57-149894 (Received March 9, 1981).
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献