Effects of total liquid encapsulation on the characteristics of GaAs single crystals grown by the vertical gradient freeze technique-Reference-Cited by-同舟云学术

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Effects of total liquid encapsulation on the characteristics of GaAs single crystals grown by the vertical gradient freeze technique

Published:1991-03 Issue:3 Volume:110 Page:395-404
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bourret E.D.,Merk E.C.

Publisher

Elsevier BV

Reference18 articles.

1. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals

2. Proc. 5th Conf. on Semi-Insulating III–V Materials;Clemans,1988

3. Growth and characterization of low defect GaAs by vertical gradient freeze

4. Liquid encapsulated, vertical bridgman growth of large diameter, low dislocation density, semi-insulating GaAs

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1. III Arsenide;Single Crystals of Electronic Materials;2019

2. Vertical Bridgman Growth of Binary Compound Semiconductors;Handbook of Crystal Growth;2015

3. Defects of GaAs Crystals Grown by the Pulling-Down Method;Advanced Materials Research;2010-12

4. Growth of Gallium Arsenide;Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials;2010-07-14

5. Vertical Bridgman Technique and Dewetting;Crystal Growth Processes Based on Capillarity;2010-04-16

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