Crystalline imperfections in 4H SiC grown with a seeded Lely method-Reference-Cited by-同舟云学术

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Crystalline imperfections in 4H SiC grown with a seeded Lely method

Published:1994-12 Issue:3-4 Volume:144 Page:267-276
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tuominen M.,Yakimova R.,Glass R.C.,Tuomi T.,Janzén E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Power semiconductor device figure of merit for high-frequency applications

2. J.A. Edmond, D.G. Waltz, S. Brueckner, H.-S. Kong, J.W. Palmour and C.H. Carter, Jr., in: 1991 Trans. of 1st High Temperature Electronic Conf. (Sandia National Lab., Albuquerque, NM) p. 207.

3. Amorphous and Crystalline Silicon Carbide III;Sankin,1992

4. Cree Research, Inc., Durham, NC 27713, USA.

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2. Silicon carbide;Single Crystals of Electronic Materials;2019

3. A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system;Journal of Crystal Growth;2017-06

4. 2 Properties of Semiconductors;Heteroepitaxy of Semiconductors;2016-09-15

5. Sublimation Growth of Hexagonal and Cubic SiC Layers;Reference Module in Materials Science and Materials Engineering;2016

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