Investigation of the magnetosensitivity of a dual-emitter dual-base structure in oscillator mode of operation-Reference-Cited by-同舟云学术

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Investigation of the magnetosensitivity of a dual-emitter dual-base structure in oscillator mode of operation

Published:1993-09 Issue:1 Volume:39 Page:19-23
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Smirnov N.,Nedev N.,Boursas A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Frequency sensors based on unijunction transistor;Vikulin;Radiotech. Electron.,1973

2. A magnetosensitive dual-emitter dual-base transistor;Kassabov;Sensors and Actuators A,1990

3. The vertical Hall-effect device;Popović;IEEE Electron. Device. Lett.,1985

4. Three-dimensional modelling of galvanomagnetic effects in lateral magnetotransistor structure;Nedev;Sensors and Actuators A,1992

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