Structural and physical properties of InAlAs quantum dots grown on GaAs-Reference-Cited by-同舟云学术

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Structural and physical properties of InAlAs quantum dots grown on GaAs

Published:2018-04 Issue: Volume:535 Page:262-267
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Vasile B.S.,Daly A. Ben,Craciun D.,Alexandrou I.,Lazar S.,Lemaître A.,Maaref M.A.,Iacomi F.,Craciun V.

Funder

French Academic Agency

Romanian

Nucleu Program-INFLPR

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots

2. Structural and optical properties of self-assembled InGaAs quantum dots

3. Critical layer thickness for self-assembled InAs islands on GaAs

4. Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs

5. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and Experimental Study of GaAs Substrate Thermal Conductivity Using 3-Omega Method;Smart Innovation, Systems and Technologies;2019-08-02

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