Alloy composition and optoelectronic properties of dilute GaSb1−xNx by pseudo-potential calculations
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference46 articles.
1. Band parameters for nitrogen-containing semiconductors
2. InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
3. InSb1−xNx growth and devices
4. Negative Band Gaps in DiluteInNxSb1−xAlloys
5. Growth of dilute GaNSb by plasma-assisted MBE
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