Influence of thickness, Si and SiO2/Si substrate interfaces upon magnetization dynamics in RF sputtered Fe3O4 thin films-Reference-Cited by-同舟云学术

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Influence of thickness, Si and SiO2/Si substrate interfaces upon magnetization dynamics in RF sputtered Fe3O4 thin films

Published:2024-08 Issue: Volume:687 Page:416101
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Roy Jyotirmoy^ORCID,Teja Pajjuru Ravi,Sahu Savita,Ali Asif,Basheed G.A.,Gangineni R.B.^ORCID

Publisher

Elsevier BV

Reference62 articles.

1. Magnetoresistance of Fe3O4/Au/Fe3O4 and Fe3O4/Au/Fe spin-valve structures;Van Dijken;J. Magn. Magn Mater.,2004

2. Spin response in organic spin valves based on La 2 ∕ 3 Sr 1 ∕ 3 Mn O 3 electrodes;Wang;Phys. Rev. B,2007

3. Effect of spacer layer thickness on the magnetic and magnetotransport properties of Fe 3 O 4 ∕ Cu ∕ Ni 80 Fe 20 spin valve structures;Tripathy;Phys. Rev. B,2007

4. Low temperature tunneling magnetoresistance on (La,Sr)MnO3∕Co junctions with organic spacer layers;Vinzelberg;J. Appl. Phys.,2008

5. Structure and transport properties of current-perpendicular-to-plane spin valves using Co2FeAl0.5Si0.5 and Co2MnSi Heusler alloy electrodes;Furubayashi;J. Appl. Phys.,2010

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