Growth of Cu2InO4 thin films on Si substrate by thermal evaporation technique and enhancement of thermoelectric properties by post-growth annealing-Reference-Cited by-同舟云学术

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Growth of Cu2InO4 thin films on Si substrate by thermal evaporation technique and enhancement of thermoelectric properties by post-growth annealing

Published:2019-06 Issue: Volume:562 Page:59-62
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Jacob Jolly,Wahid R.,Ali A.,Zahra R.,Ikram S.,Amin N.,Ashfa A.,Rehman U.,Hussain Sajad,Al-Othmany Dheya Shjaa,Ilyas S. Zafar,Mahmood K.

Funder

Pakistan Higher Education Commission under Pak-US Science and Technology Cooperation Program

Pakistan Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Relationship between structure and deposition conditions for CuInO2 thin films;Yaicle;Appl. Surf. Sci.,2007

2. Photoresponse characteristics of p-Si/n-CuxInO heterojunction diode prepared by sol-gel spin coating;Mageshwari;Mater. Sci. Semicond. Process.,2016

3. Optical and structural properties of nanocrystalline copper oxide thin films prepared by activated reactive evaporation;Balamurugan;Thin Solid Films,2001

4. Electronic structure and optical properties of CuInO2 under equibiaxial strain;Ghosh;Comput. Mater. Sci.,2012

5. Tin-incorporated nanostructured copper indium oxide delafossite thin films: structural, electrical and optical analysis;Nair;J. Alloy. Comp.,2018

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