Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures-Reference-Cited by-同舟云学术

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Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures

Published:2020-07 Issue:7 Volume:52 Page:1537-1544
ISSN:1738-5733
Container-title:Nuclear Engineering and Technology
language:en
Short-container-title:Nuclear Engineering and Technology

Author:

He Huan,He Chaohui,Zhang Jiahui,Liao Wenlong,Zang Hang,Li Yonghong,Liu Wenbo

Funder

Science Challenge Project

National Natural Science Foundation of China

NSAF Joint Fund

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering

Reference32 articles.

1. GaN and ZnO-Based Materials and Devices;Pearton,2012

2. Proton-induced damage in gallium nitride-based Schottky diodes;Karmarkar;IEEE Trans. Nucl. Sci.,2005

3. Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs);Khanal;J. Appl. Phys.,2018

4. Threshold displacement energy in GaN: ab initio molecular dynamics study;Xiao;J. Appl. Phys.,2009

5. Ab initio calculations of structural and energetic properties of defects in gallium nitride;Xiao;J. Appl. Phys.,2008

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2. Threshold displacement energy map of Frenkel pair generation in β-Ga2O3 from machine-learning-driven molecular dynamics simulations;Acta Materialia;2024-09

3. Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation;Applied Physics Letters;2024-04-08

4. Temperature Effect on GaN Threshold Displacement Energy Under Low‐Energy Electron Beam Irradiation;Advanced Electronic Materials;2024-04-04

5. Threshold displacement energies and primary radiation damage in AlN from molecular dynamics simulations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02

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