Defect-related growth processes at an amorphous/crystalline interface: a molecular dynamics study
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Kinetics of solid phase crystallization in amorphous silicon
2. Ion-beam-induced epitaxial crystallization and amorphization in silicon
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5. Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon
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1. Molecular dynamics simulations using machine learning potential for a-Si:H/c-Si interface: Effects of oxygen and hydrogen on interfacial defect states;Journal of Materials Research;2023-09-08
2. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111);Surface Science;2016-09
3. Quantum confinement and band offsets in amorphous silicon quantum wells;Physical Review B;2014-09-18
4. Front-end process modeling in silicon;The European Physical Journal B;2009-11-07
5. Anomalous annealing behavior of isolated amorphous zones in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
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