High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding-Reference-Cited by-同舟云学术

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High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

Published:2006-12 Issue:7 Volume:201 Page:4014-4020
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Chichignoud G.,Pons M.,Blanquet E.,Chaussende D.,Anikin M.,Pernot E.,Mermoux M.,Madar R.,Moisson C.,Letertre F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference11 articles.

1. III-V layer transfer onto silicon and applications

2. SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations

3. Recent Major Advances in Silicon Carbide;Monnoye,2004

4. Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

5. Continuous Feed Physical Vapor Transport

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nucleation and growth of polycrystalline SiC;IOP Conference Series: Materials Science and Engineering;2014-03-31

2. Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers;Materials Science Forum;2013-01

3. Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials;Materials Science Forum;2010-04

4. Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth;Surface and Coatings Technology;2007-09

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