Epitaxial growth of TiN on (0001) semi-insulating 4H-SiC substrate by reactive sputtering-Reference-Cited by-同舟云学术

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Epitaxial growth of TiN on (0001) semi-insulating 4H-SiC substrate by reactive sputtering

Published:2022-05 Issue: Volume:437 Page:128357
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Chen Hsueh-I,Chiu Kun-An,Lin Jing-Feng,Lin Kuan-Yu,Chen Wei-Chia,Wu Ping-Hsun,Ko Cheng-Jung,Chang Li,Chen Chun-Hua

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference23 articles.

1. Silicon carbide as a platform for power electronics;Eddy;Science,2009

2. Bulk growth of single crystal silicon carbide;Sudarshan;Microelectron. Eng.,2006

3. Silicon carbide color centers for quantum applications;Castelletto;J. Phys. Photonics,2020

4. Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface;Gao;CrystEngComm,2019

5. Comparison of 3C-SiC, 6H-SiC and 4H-SiC MESFETs performances;Codreanua;Mater. Sci. Semicond. Process.,2000

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-temperature annealing effects on epitaxial TiN films on 4H-SiC;Surface and Coatings Technology;2024-05

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