XPS modeling of GaN/GaAs nanostructure grown by the droplet epitaxy technique-Reference-Cited by-同舟云学术

XPS modeling of GaN/GaAs nanostructure grown by the droplet epitaxy technique

Published:2022-12 Issue: Volume:261 Page:147257
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Tsamo Guy,Monier Guillaume,Hoggan Philip,Robert-Goumet Christine,Petit Matthieu,Ranguis Alain,Bideux Luc

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference55 articles.

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