Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations-Reference-Cited by-同舟云学术

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Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

Published:2014-03 Issue: Volume:43 Page:34-42
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Maréchal A.,Rouger N.,Crébier J.-C.,Pernot J.,Koizumi S.,Teraji T.,Gheeraert E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Extreme dielectric strength in boron doped homoepitaxial diamond;Volpe;Appl. Phys. Lett.,2010

2. Electrical properties of lateral p–n junction diodes fabricated by selective growth of n+ diamond;Hoshino;Phys. Status Solidi A,2012

3. Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53GHz;Russell;IEEE Electron Device Lett.,2012

4. Diamond junction field-effect transistors with selectively grown n+-side gates;Iwasaki;Appl. Phys. Express,2012

5. Diamond bipolar junction transistor device with phosphorus-doped diamond base layer;Kato;Diamond Relat. Mater.,2012

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Field Transport in (Ultra) Wide Bandgap Semiconductors: Diamond Versus Cubic GaN;IEEE Transactions on Electron Devices;2024-09

2. Thermal management and switching performance of β-Ga₂O₃ vertical FinFET with diamond-gate structure;Semiconductor Science and Technology;2024-05-23

3. Investigation of Ga₂O₃/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation;Chinese Physics B;2023-10-01

4. The perspectives of diamond for 3H and 63Ni betavoltaic power sources, comparison with 4H–SiC;AIP Advances;2023-10-01

5. Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm);IEEE Electron Device Letters;2023-10

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