Numerical simulation and characterization of high-power gallium nitride based Junctionless Accumulation Mode Nanowire FET (GaN-JAM-NWFET) for small signal high frequency terahertz applications

Author:

Anupama ,Rewari Sonam,Pandey NeetaORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference36 articles.

1. International technology roadmap for semiconductors (ITRS), 2014 [Online]. Available: http://public.itrs.net.

2. A Survey of Wide Bandgap Power Semiconductor Devices;Millan;IEEE Trans Power Electron,2014

3. Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator;Sugiura;Solid State Electron,2010

4. Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability;Yoon;Electronics,2020

5. Y. Jin, “Simulation methodology to compare emerging technologies for alternatives to silicon gigascale logic device.” 2006.

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