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A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

  • Published:2023-04 Issue: Volume:162 Page:154565
  • ISSN:1434-8411
  • Container-title:AEU - International Journal of Electronics and Communications
  • language:en
  • Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Sachdeva AshishORCID,Kumar Deepak,Abbasian Erfan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference75 articles.

1. Ultra-low power signal conditioning system for effective biopotential signal recording;Thakur;J Micromech Microeng,2021

2. A vision of cyber-physical cloud computing for smart networked systems;Simmon,2013

3. Ultra low-power low-pass filter design for wearable biomedical applications;Thakur,2021

4. Design of a soft error hardened SRAM cell with improved access time for embedded systems;Tomar;Microprocess Microsyst,2022

5. Ultra low-power 7T SRAM cell design based on CMOS;Moghaddam,2015

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1. Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs;Physica Scripta;2024-07-19

2. A novel design of collapsed supply and boosted bit-line swing write driver for fast write access 9T SRAM;Engineering Research Express;2024-07-11

3. Area-energy optimized ternary multiplier usingefficient design approaches in GNRFET technology;AEU - International Journal of Electronics and Communications;2024-07

4. An Efficient Approach to Design Ternary Logic Circuits with GNRFETs;2024 IEEE International Conference on Information Technology, Electronics and Intelligent Communication Systems (ICITEICS);2024-06-28

5. Design and Simulation of New High Speed, Low Power D-Flip-Flops, Implemented Using Graphene Nanoribbon and Carbon Nanotube Field Effect Transistors;Iranian Journal of Science and Technology, Transactions of Electrical Engineering;2024-06-19
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