Structural investigations on low-frequency, low-temperature, plasma-deposited a-SiNx: H films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. The structure of plasma‐deposited silicon nitride films determined by infrared spectroscopy
2. Bonding properties of amorphous SiNx:H films with low density of Si-H bonds
3. Amorphous silicon nitride thin films deposited using d. c. discharge and post-discharge devices
4. Infrared and optical study of a-SiN alloys
5. Microstructure of nitrogen-rich a-SixNyHz films
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1. Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric;Advanced Materials;2009-11-26
2. SiH bonding environment in PECVD a-SiOxNy:H thin films;Journal of the European Ceramic Society;1997-01
3. XPS and AES characterization of SiNx:H layers deposited by PECVD on Parylene C. Effects of thermal treatments on Parylene C surfaces and Parylene C/SiNx:H interlayers;Thin Solid Films;1995-03
4. AES and HRTEM study of an a-SiNx: H/W/WSix/a-SiNx: H multilayer structure realized by PEVCD;Surface and Interface Analysis;1994-12
5. Realization of capacitive structures from plasma enhanced chemical vapor deposition process;Materials Science and Engineering: B;1993-09
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