Deep-level distributions in hydrogenated amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopy
2. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
3. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
4. Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy
5. Defect states in doped and compensateda-Si: H
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