Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i

Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes

Published:2007-12 Issue:12 Volume:38 Page:1273-1279
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Della Corte Francesco G.,Pezzimenti Fortunato,Nipoti Roberta

Publisher

Elsevier BV

Subject

General Engineering

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