Characterizing parameter variations for enhanced performance and adaptability in 3 nm MBCFET technology-Reference-Cited by-同舟云学术

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Characterizing parameter variations for enhanced performance and adaptability in 3 nm MBCFET technology

Published:2024-09 Issue: Volume:151 Page:106338
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Rafiee Mahmood,Shiri Nabiollah^ORCID,Gharehkhani Mohsen,Castellanos Alexandra Pinto,Sadeghi Ayoub

Publisher

Elsevier BV

Reference32 articles.

1. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials

2. Physical insights of Si-Core-SiGe-Shell gate-all-around nanosheet pFET for 3 nm technology node;Xu;IEEE Trans. Electron. Dev.,2023

3. Fin core dimensionality and corner effect in dual core gate-all-around finfet;Das;Microelectron. J.,2024

4. Junctionless-accumulation-mode Stacked Gate GAA finfet with dual-K spacer for reliable RFIC Design;Kumar;Microelectron. J.,2023

5. Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly;Huang;Adv. Mater.,2021

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