DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
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Publisher
Elsevier BV
Reference40 articles.
1. Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: unveiling the remarkable 1700V breakdown voltage milestone;Binola K Jebalin;Microelectron. J.,2024
2. Investigation of dynamic Ron stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs;Shen;Microelectron. J.,2023
3. Augustine Fletcher, High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: a simulation study;Sivamani;Microelectron. J.,2023
4. 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device;Lian;Microelectron. J.,2023
5. Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices;Toprak;Microelectron. J.,2023
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