Analytical modeling of threshold voltage and on-resistance in multi-barrier E-mode MISHEMT with gate-recess and field-plates-Reference-Cited by-同舟云学术

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Analytical modeling of threshold voltage and on-resistance in multi-barrier E-mode MISHEMT with gate-recess and field-plates

Published:2024-09 Issue: Volume:151 Page:106318
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Nagabushanam K.,Sriadibhatla Sridevi^ORCID

Publisher

Elsevier BV

Reference27 articles.

1. AlGaN/GaN HEMTs—an overview of device operation and applications;Mishra;Proc. IEEE,2002

2. A survey of wide bandgap power semiconductor devices;Millan;IEEE Trans. Power Electron.,2014

3. Application-based review of GaN HFETs;Jones,2014

4. Modeling and simulation of DC and microwave characteristics of AlInN (AlGaN)/AlN/GaN MOSHEMTs with different gate lengths;Amarnath;Int J Numer Modell Electron Networks Devices Fields,2019

5. Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT;Jena;Int J Numer Model,2017

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