Ambipolar current suppression in drain elevated TFET using a novel extended drain structure with a moderate doping profile-Reference-Cited by-同舟云学术

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Ambipolar current suppression in drain elevated TFET using a novel extended drain structure with a moderate doping profile

Published:2024-09 Issue: Volume:151 Page:106302
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

T.S. Manivannan^ORCID,Pasupathy K.R.,Lakshminarayanan G.

Publisher

Elsevier BV

Reference31 articles.

1. Challenges and limitations of CMOS scaling for FinFET and beyond architectures;Razavieh;IEEE Trans. Nanotechnol.,2019

2. Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET;Das;IEEE Trans. Electron Dev.,2020

3. Ge GAA fets and TMD FinFETs for the applications beyond Si—A review;Lee;IEEE J. Electron Dev. Soc.,2016

4. Investigation of device performance for fin angle optimization in FinFET and gate-all-around FETs for 3 nm-node and beyond;Kim;IEEE Trans. Electron Dev.,2022

5. A novel bottom spacer FinFET structure for improved short-channel, power-delay, and thermal performance;Shrivastava;IEEE Trans. Electron Dev.,2010

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