Funder
Chinese Academy of Sciences
Reference23 articles.
1. Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates;Mertens,2016
2. 5-nm gate-all-around transistor technology with 3-D stacked nanosheets;Gundu;IEEE Trans. Electron. Dev.,2022
3. “(Invited) evaluation of stacked nanowires transistors for CMOS: performance and technology opportunities,”;Gaben;ECS Trans.,2016
4. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET;Loubet,2017
5. Physical insights on quantum confinement and carrier mobility in Si, Si0.45Ge0.55, Ge gate-all-around NSFET for 5nm technology node;Yao;IEEE J. Electron Devices Soc.,2018