Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing-Reference-Cited by-同舟云学术

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Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing

Published:2024-07 Issue: Volume:50 Page:104459
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Huo Jinxiang^ORCID,Gao Baohong^ORCID,He Bin,Li Wenhaoyu^ORCID,Liang Bin,Liu Mingyu,Chen Xuhua^ORCID

Publisher

Elsevier BV

Reference63 articles.

1. Approaches to sustainability in chemical mechanical polishing (CMP): a review;Lee;Int. J. Preci. Eng. Manuf. Green Technol.,2022

2. Nanoscale tribological aspects of chemical mechanical polishing: a review;Datta;Appl. Surf. Sci. Adv.,2022

3. Atomistic mechanisms of Cu CMP in aqueous H2O2: molecular dynamics simulations using ReaxFF reactive force field;Guo;Comput. Mater. Sci.,2018

4. Chemical mechanical planarization: slurry chemistry, materials, and mechanisms;Krishnan;Chem. Rev.,2010

5. Environment friendly chemical mechanical polishing of copper;Zhang;Appl. Surf. Sci.,2019

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