Diamond/cubic boron nitride (111) heterojunction interface: Rational regulation of high two-dimonsional electron gas
Author:
Funder
Fundamental Research Funds for the Central Universities
Publisher
Elsevier BV
Reference37 articles.
1. High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2passivation;Fan;Sci. China Inf. Sci.,2023
2. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics;Matsumoto;Sci. Rep.,2016
3. Ultraviolet emission from a diamond pn junction;Koizumi;Science (1979),2001
4. Epitaxy of cubic boron nitride on (001)-oriented diamond[J];Zhang;Nat. Mater.,2003
5. High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal[J];WANG;Appl. Phys. Lett.,2003
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