HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy-Reference-Cited by-同舟云学术

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HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy

Published:2002-06 Issue:3-5 Volume:43 Page:157-163
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Gawron W,Rogalski A

Publisher

Elsevier BV

Reference12 articles.

1. Infrared detectors;Elliott,1993

2. Infrared Detectors;Rogalski,2000

3. Narrow-gap semiconductor photodiodes;Rogalski,2000

4. Improved performance of IR photodetectors with 3D gap engineering;Piotrowski;Proc. SPIE,1995

5. Multi-junction HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperature;Musca;J. Electron. Mater.,1998

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3. Barrier Structures on the Basis of Graded-Band-Gap CdHgTe Obtained by Evaporation-Condensation-Diffusion Method;Archives of Metallurgy and Materials;2016-03-01

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