Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation-Reference-Cited by-同舟云学术

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Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation

Published:2023-01 Issue: Volume:608 Page:155094
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Arapkina Larisa V.,Chizh Kirill V.,Dubkov Vladimir P.,Storozhevykh Mikhail S.,Yuryev Vladimir A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference67 articles.

1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001);Mo;Phys. Rev. Lett.,1990

2. STM study of the Ge growth mode on Si(001) substrates;Tomitori;Appl. Surf. Sci.,1994

3. Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001);Liu;Chem. Rev.,1997

4. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth;Voigtlander;Surf. Sci. Rep.,2001

5. Growth and self-organization of SiGe nanostructures;Aqua;Phys. Rep.,2013

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