Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching-Reference-Cited by-同舟云学术

Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching

Published:2022-08 Issue: Volume:592 Page:153248
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Son Hoki,Uthirakumar Periyayya,Polyakov A.Y.,Park Jae Hong,Lee Kang Hyun,Lee In-Hwan

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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5. Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer;Liang;Nanophotonics,2020

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