Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by using in-situ MOCVD-SiNx as an interface sacrificial layer
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference26 articles.
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1. Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3;Applied Physics Letters;2024-04-08
2. Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment;Nanomaterials;2024-03-14
3. Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy;Applied Surface Science;2023-12
4. Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications;Micromachines;2023-11-16
5. Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance;Applied Physics Letters;2023-09-04
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