Characteristics of sputtered Ta–B–N thin films as diffusion barriers between copper and silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference24 articles.
1. Electrical Properties of Giant‐Grain Copper Thin Films Formed by a Low Kinetic Energy Particle Process
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3. Deep Impurities in Semiconductors;Milnes,1973
4. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization
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1. Thermal stability of ultra thin Zr-B-N films as diffusion barrier between Cu and Si;Applied Surface Science;2020-10
2. Effect of Boron and Oxygen on the Structure and Properties of Protective Decorative Cr–Al–Ti–N Coatings Deposited by Closed Field Unbalanced Magnetron Sputtering (CFUBMS);Applied Sciences;2019-11-19
3. Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si;Nanomaterials;2015-11-03
4. Thermal stability, adhesion and electrical studies on (Ti,Zr)N x thin films as low resistive diffusion barriers between Cu and Si;Electronic Materials Letters;2014-05
5. Microstructure characterization of nano-structured Cr/Cr2N multilayer films produced through radio frequency magnetron sputtering;Thin Solid Films;2014-01
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