Growth of thin Si oxide in a cyclic oxygen plasma environment below 200°C-Reference-Cited by-同舟云学术

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Growth of thin Si oxide in a cyclic oxygen plasma environment below 200°C

Published:2008-08 Issue:20 Volume:254 Page:6422-6427
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Moon Jaehyun,Kim Yong-Hae,Chung Choong-Heui,Lee Su-Jae,Park Dong-Jin,Song Yoon-Ho

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. Review of oxidation processes in plasmas†

2. Plasma-assisted oxidation, anodization, and nitridation of silicon

3. Oxide growth in an rf plasma

4. Flexible Flat Panel Displays;Wagner,2005

5. Self-aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate

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2. Role of Mg in porous oxide scale growth formation on welded Al 6061 (Al-Mg-Si);Materials Today: Proceedings;2023

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