Ohmic contact mechanism for RF superimposed DC sputtered-ITO transparent p-electrodes with a variety of Sn2O3 content for GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

Ohmic contact mechanism for RF superimposed DC sputtered-ITO transparent p-electrodes with a variety of Sn2O3 content for GaN-based light-emitting diodes

Published:2018-02 Issue: Volume:432 Page:233-240
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Tae Kyoung,Yoon Yeo Jin,Oh Seung Kyu,Lee Yu Lim,Cha Yu-Jung,Kwak Joon Seop

Funder

Ministry of Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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