Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm-Reference-Cited by-同舟云学术

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Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm

Published:2024-08 Issue: Volume:664 Page:160243
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chung Hong Keun,Jeon Jihoon^ORCID,Kim Han,Jang Myoungsu,Kim Sung-Chul^ORCID,Won Sung Ok,Baek In-Hwan,Chung Yoon Jang,Han Jeong Hwan,Cho Sung Haeng,Park Tae Joo,Kim Seong Keun

Funder

KSRC

National Research Council of Science and Technology

Korea Institute of Science and Technology

MOTIE

Publisher

Elsevier BV

Reference37 articles.

1. High-dielectric constant thin films for dynamic random access memories (DRAM);Scott;Annu. Rev. Mater. Sci.,1998

2. Future of dynamic random-access memory as main memory;Kim;MRS Bull.,2018

3. Capacitors with an equivalent oxide thickness of < 0.5 nm for nanoscale electronic semiconductor memory;Kim;Adv. Funct. Mater.,2010

4. Permittivity of strontium titanate;Neville;J. Appl. Phys.,1972

5. Process–property relationship in high-k ALD SrTiO3 and BaTiO3: a review;Shim;J. Mater. Chem. C,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sustained Area‐Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O₃ in Deposition and Etching;Small;2024-07-30

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