Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon

Published:2014-08 Issue: Volume:310 Page:230-234
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liang J.H.^ORCID,Wu C.H.

Funder

National Science Council of the Republic of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Ion Implantation;Ryssel,1986

2. Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

3. Proceedings of the 1998 International Conference on Ion Implantation Technology;Ling,1998

4. Proceedings of the 16th International Conference on Application of Accelerators in Research and Industry;Chu,2000

5. Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP