Microstructure and electronic property of pristine and thermal barrier layers TiN/AlN/ZrB2 buffered 4H-SiC/W interface from first principles study

Author:

Zhu Yunfan,Yang Haozhen,Zhang Xiaomin,Yin Deqiang

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Venture & Innovation Program for Chongqing Overseas Returnees

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference52 articles.

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3. Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC;Rozen;Appl. Phys. Lett.,2007

4. Progress in tribological research of SiC ceramics in unlubricated sliding-A review;Zhang;Mater. Design,2020

5. Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC;Chen;J. Am. Ceram. Soc.,2019

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