Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs-Reference-Cited by-同舟云学术

Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs

Published:2021-04 Issue: Volume:546 Page:148710
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

He Liang^ORCID,Li Liuan,Yang Fan,Zheng Yue,Zhang Jialin,Que Taotao,Liu Zhenxing,Zhang Jinwei,Wu Qianshu,Liu Yang

Publisher

Elsevier BV

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