Structural-spectroscopic study of epitaxial GaAs layers grown on compliant substrates based on a superstructural layer and protoporous silicon-Reference-Cited by-同舟云学术

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Structural-spectroscopic study of epitaxial GaAs layers grown on compliant substrates based on a superstructural layer and protoporous silicon

Published:2021-01 Issue: Volume:537 Page:147985
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Seredin P.V.,Goloshchapov D.L.,Arsentyev I.N.,Nikolayev D.N.,Pikhtin N.A.,Slipchenko S.O.,Leiste Harald,Prutskij Tatiana

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference64 articles.

1. GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers;Ballabio;Sci. Rep.,2019

2. Direct growth of a GaInP/GaAs/Si triple-junction solar cell with 22.3% AM1.5g efficiency;Feifel;Sol RRL,2019

3. Influence of two-stage growth during the formation of GaAs/Si heterostructures for the creation of optoelectronic devices;Geldash;J. Phys. Conf. Ser.,2019

4. Strain relaxation of GaAs/Ge crystals on patterned Si substrates;Taboada;Appl. Phys. Lett.,2014

5. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon;Li;Appl. Phys. Lett.,2015

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning performance: strain modulation of GaAs layers grown on meso-porous silicon substrates;Journal of Materials Science: Materials in Electronics;2024-06

2. Intraband absorption of GaAs cylindrical quantum dot with Kratzer confinement potential in the presence of external electric and magnetic fields;Quantum Optics and Photon Counting 2023;2023-06-06

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