Nitrogen doped ultrananocrystalline diamond conductive layer grown on InGaN-based light-emitting diodes using nanopattern enhanced nucleation

Author:

Ke Wen-Cheng,Chiang Chih-Yung,Kim Tae-Gyu,Lin Yi-Chan,Liao Chia-Yu,Chang Kuo-Jen,Lin Jia-Ching

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference39 articles.

1. InGaN-based blue/green LEDs and laser diodes;Nakamura;Adv. Mater.,1996

2. Recent progress in GaN-based light-emitting diodes;Jia;Adv. Mater.,2009

3. High power surface emitting InGaN superluminescent light-emitting diodes;Cahill;Appl. Phys. Lett.,2019

4. Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication;Khoury;Nano Energy.,2018

5. Enhancement of heat dissipation in ultraviolet light-emitting diodes by a vertically oriented graphene nanowall buffer layer;Ci;Adv. Mater.,2019

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